SI7485DP-T1-GE3
MOSFET P-CH 20V 12.5A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel PowerPAK® SO-8 MOSFET, part number SI7485DP-T1-GE3. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 12.5A at 25°C ambient. The on-resistance (Rds On) is a maximum of 7.3mOhm at 20A drain current and 4.5V gate-source voltage. With a gate charge of 150nC (max) at 5V, this surface mount component is suitable for power management applications in automotive and industrial sectors. The PowerPAK® SO-8 package offers efficient thermal performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 20A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 900mV @ 1mA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 5 V |