SI7485DP-T1-E3
MOSFET P-CH 20V 12.5A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel Power MOSFET, part number SI7485DP-T1-E3, offers a 20V drain-to-source voltage and 12.5A continuous drain current at 25°C (Ta). This device features a low on-resistance of 7.3mOhm maximum at 20A and 4.5V gate-source voltage. The gate charge is specified at 150nC maximum for 5V gate-source voltage, with a threshold voltage (Vgs(th)) of 900mV maximum at 1mA. Packaged in a Surface Mount PowerPAK® SO-8, this MOSFET is suitable for applications in consumer electronics and industrial power management. The device is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 20A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 900mV @ 1mA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 5 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
