SI7483ADP-T1-E3
MOSFET P-CH 30V 14A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI7483ADP-T1-E3, offers a 30V drain-to-source voltage. This device features a maximum continuous drain current of 14A (Ta) with a low on-resistance of 5.7mOhm at 24A and 10V Vgs. The PowerPAK® SO-8 package facilitates efficient heat dissipation with a maximum power dissipation of 1.9W (Ta). Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications requiring robust power switching. Key parameters include a Vgs(th) of 3V at 250µA and a gate charge of 180 nC at 10V Vgs. It is commonly found in power management and high-efficiency switching circuits across various industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |