SI7478DP-T1-GE3
MOSFET N-CH 60V 15A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7478DP-T1-GE3 is a 60 V N-channel Power MOSFET designed for high-efficiency power conversion applications. This device features a low Rds(on) of 7.5 mOhm at 20 A and 10 V Vgs, enabling reduced conduction losses. With a continuous drain current of 15 A (Ta) and a maximum power dissipation of 1.9 W (Ta), it is suitable for power management in computing, industrial, and automotive sectors. The PowerPAK® SO-8 package offers a compact footprint for surface mounting. Key parameters include a gate charge of 160 nC at 10 V, a gate-source voltage range of ±20 V, and a threshold voltage of 3 V at 250 µA. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
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