SI7476DP-T1-E3
MOSFET N-CH 40V 15A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® series N-Channel MOSFET, part number SI7476DP-T1-E3, is a 40V device designed for high-efficiency power switching applications. This MOSFET features a maximum continuous drain current of 15A at 25°C with a power dissipation of 1.9W. The Rds On is minimized to 5.3mOhm at 25A and 10V drive, with a gate charge of 177 nC at 10V. It operates across a wide temperature range of -55°C to 150°C. The device is housed in a PowerPAK® SO-8 package for efficient thermal management and is supplied in Tape & Reel (TR) packaging. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 177 nC @ 10 V |
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