SI7469ADP-T1-RE3
MOSFET P-CH 80V 7.4A/46A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® Gen IV P-Channel MOSFET, part number SI7469ADP-T1-RE3, offers 80V drain-to-source voltage and a continuous drain current of 7.4A at 25°C ambient and 46A at 25°C case temperature. This device features a low on-resistance of 19.3mOhm maximum at 10A and 10V, with a gate charge of 65 nC maximum at 10V. The input capacitance (Ciss) is 3420 pF maximum at 40V. Packaged in a PowerPAK® SO-8 for surface mounting, it supports a maximum power dissipation of 5W ambient and 73.5W case. Operating temperature range is -55°C to 150°C (TJ). The SI7469ADP-T1-RE3 is suitable for applications in power management, automotive, and industrial systems.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.3mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 73.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3420 pF @ 40 V |
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