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SI7469ADP-T1-RE3

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SI7469ADP-T1-RE3

MOSFET P-CH 80V 7.4A/46A PPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® Gen IV P-Channel MOSFET, part number SI7469ADP-T1-RE3, offers 80V drain-to-source voltage and a continuous drain current of 7.4A at 25°C ambient and 46A at 25°C case temperature. This device features a low on-resistance of 19.3mOhm maximum at 10A and 10V, with a gate charge of 65 nC maximum at 10V. The input capacitance (Ciss) is 3420 pF maximum at 40V. Packaged in a PowerPAK® SO-8 for surface mounting, it supports a maximum power dissipation of 5W ambient and 73.5W case. Operating temperature range is -55°C to 150°C (TJ). The SI7469ADP-T1-RE3 is suitable for applications in power management, automotive, and industrial systems.

Additional Information

Series: TrenchFET® Gen IVRoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs19.3mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id2.6V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3420 pF @ 40 V

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