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SI7463DP-T1-GE3

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SI7463DP-T1-GE3

MOSFET P-CH 40V 11A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI7463DP-T1-GE3, offers a 40V drain-source breakdown voltage and a continuous drain current of 11A at 25°C (Ta). This device features a low on-resistance of 9.2mOhm maximum at 18.6A and 10V gate-source voltage, facilitated by its advanced TrenchFET® technology. The P-Channel MOSFET is housed in a PowerPAK® SO-8 surface mount package, designed for efficient thermal dissipation with a maximum power dissipation of 1.9W (Ta). It operates across a temperature range of -55°C to 150°C (TJ) and supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Its typical applications span power management, battery charging, and load switching in consumer electronics and industrial systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Rds On (Max) @ Id, Vgs9.2mOhm @ 18.6A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V

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