SI7463DP-T1-GE3
MOSFET P-CH 40V 11A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI7463DP-T1-GE3, offers a 40V drain-source breakdown voltage and a continuous drain current of 11A at 25°C (Ta). This device features a low on-resistance of 9.2mOhm maximum at 18.6A and 10V gate-source voltage, facilitated by its advanced TrenchFET® technology. The P-Channel MOSFET is housed in a PowerPAK® SO-8 surface mount package, designed for efficient thermal dissipation with a maximum power dissipation of 1.9W (Ta). It operates across a temperature range of -55°C to 150°C (TJ) and supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Its typical applications span power management, battery charging, and load switching in consumer electronics and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 18.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
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