SI7462DP-T1-GE3
MOSFET N-CH 200V 2.6A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-CH 200V 2.6A PowerPAK® SO-8, part number SI7462DP-T1-GE3. This N-Channel power MOSFET features a Drain to Source Voltage (Vdss) of 200 V and a continuous drain current (Id) of 2.6A at 25°C ambient temperature, with a typical Rds On of 130mOhm at 4.1A and 10V Vgs. The device is housed in a PowerPAK® SO-8 surface mount package and utilizes Metal Oxide technology. Key electrical parameters include a Gate Charge (Qg) not exceeding 30 nC at 10V Vgs and a Gate Threshold Voltage (Vgs(th)) of 4V at 250µA. This component is commonly utilized in power supply circuits, motor control, and general-purpose switching applications within the industrial and automotive sectors. The provided packaging is Cut Tape (CT).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 4.1A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
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