SI7462DP-T1-E3
MOSFET N-CH 200V 2.6A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number SI7462DP-T1-E3, offers a 200V drain-source breakdown voltage and a continuous drain current capability of 2.6A at 25°C ambient temperature. This device features a low on-resistance of 130mOhm maximum at 4.1A and 10V Vgs, with a gate charge of 30nC maximum at 10V. The SI7462DP-T1-E3 is housed in a PowerPAK® SO-8 surface-mount package, suitable for applications in industrial and automotive sectors. The technology employed is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). This component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 4.1A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
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