SI7460DP-T1-E3
MOSFET N-CH 60V 11A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7460DP-T1-E3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C ambient. The low on-resistance of 9.6 mOhm at 18A and 10V gate-source voltage, coupled with a 4.5V to 10V drive voltage range, ensures efficient power delivery. The MOSFET's gate charge is specified at a maximum of 100 nC at 10V. Housed in a PowerPAK® SO-8 surface mount package, it offers a maximum power dissipation of 1.9W (Ta). Operating across a temperature range of -55°C to 150°C, this component is suitable for use in various industrial and automotive power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
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