SI7459DP-T1-GE3
MOSFET P-CH 30V 13A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7459DP-T1-GE3 is a P-Channel Power MOSFET designed for demanding applications. This device offers a 30V drain-source breakdown voltage and supports a continuous drain current of 13A at 25°C, with a maximum power dissipation of 1.9W. Key performance characteristics include a low on-resistance of 6.8mOhm at 22A and 10V gate drive. The TrenchFET® technology ensures efficient switching and reduced conduction losses. The PowerPAK® SO-8 package provides a compact footprint suitable for surface mounting. This component is utilized in various industries including industrial automation, automotive systems, and power management solutions. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
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