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SI7459DP-T1-E3

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SI7459DP-T1-E3

MOSFET P-CH 30V 13A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI7459DP-T1-E3, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 13A at 25°C. This device features a low on-resistance of 6.8mOhm maximum at 22A and 10V Vgs, contributing to high efficiency in power conversion applications. The PowerPAK® SO-8 package provides excellent thermal performance with a maximum power dissipation of 1.9W at 25°C. Key parameters include a gate charge of 170 nC at 10V and a gate-source threshold voltage of 3V at 250µA. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive and industrial power management systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Rds On (Max) @ Id, Vgs6.8mOhm @ 22A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V

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