SI7459DP-T1-E3
MOSFET P-CH 30V 13A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI7459DP-T1-E3, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 13A at 25°C. This device features a low on-resistance of 6.8mOhm maximum at 22A and 10V Vgs, contributing to high efficiency in power conversion applications. The PowerPAK® SO-8 package provides excellent thermal performance with a maximum power dissipation of 1.9W at 25°C. Key parameters include a gate charge of 170 nC at 10V and a gate-source threshold voltage of 3V at 250µA. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
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