SI7457DP-T1-GE3
MOSFET P-CH 100V 28A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix presents the SI7457DP-T1-GE3, a P-Channel TrenchFET® power MOSFET. This component features a 100V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 28A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 42mOhm at 7.9A and 10V gate-source voltage (Vgs). Its robust construction includes a 160 nC maximum gate charge (Qg) at 10V Vgs and 5230 pF input capacitance (Ciss) at 50V Vds. With a maximum power dissipation of 5.2W (Ta) and 83.3W (Tc), this MOSFET is designed for demanding applications. The SI7457DP-T1-GE3 is packaged in a PowerPAK® SO-8 surface mount configuration, suitable for operation across a wide temperature range of -55°C to 150°C. This component finds application in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 7.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5230 pF @ 50 V |
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