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SI7457DP-T1-GE3

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SI7457DP-T1-GE3

MOSFET P-CH 100V 28A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix presents the SI7457DP-T1-GE3, a P-Channel TrenchFET® power MOSFET. This component features a 100V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 28A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 42mOhm at 7.9A and 10V gate-source voltage (Vgs). Its robust construction includes a 160 nC maximum gate charge (Qg) at 10V Vgs and 5230 pF input capacitance (Ciss) at 50V Vds. With a maximum power dissipation of 5.2W (Ta) and 83.3W (Tc), this MOSFET is designed for demanding applications. The SI7457DP-T1-GE3 is packaged in a PowerPAK® SO-8 surface mount configuration, suitable for operation across a wide temperature range of -55°C to 150°C. This component finds application in power management, automotive, and industrial sectors.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Rds On (Max) @ Id, Vgs42mOhm @ 7.9A, 10V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5230 pF @ 50 V

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