SI7457DP-T1-E3
MOSFET P-CH 100V 28A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI7457DP-T1-E3, offers a 100V drain-source breakdown voltage and a continuous drain current of 28A at 25°C (Tc). This device features a maximum on-resistance of 42mOhm at 7.9A and 10V gate-source voltage. Designed for robust performance in demanding applications, it boasts a 160 nC gate charge and 5230 pF input capacitance. The PowerPAK® SO-8 package enables efficient thermal management with a maximum power dissipation of 83.3W at 25°C (Tc). This component is suitable for power management solutions across industrial, automotive, and consumer electronics sectors. It operates reliably within a temperature range of -55°C to 150°C. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 7.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5230 pF @ 50 V |
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