SI7456DP-T1-E3
MOSFET N-CH 100V 5.7A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET SI7456DP-T1-E3 is a 100V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a low on-resistance of 25mOhm at 9.3A and 10V Vgs, minimizing conduction losses. The PowerPAK® SO-8 package offers superior thermal performance with a 1.9W power dissipation capability at 25°C ambient. With a continuous drain current of 5.7A (Ta) and a gate charge of 44 nC at 10V, the SI7456DP-T1-E3 is suitable for demanding applications including power supplies, battery management, and motor control. The device operates across a wide temperature range of -55°C to 150°C (TJ) and supports gate drive voltages up to ±20V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 9.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
