SI7456DDP-T1-GE3
MOSFET N-CH 100V 27.8A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7456DDP-T1-GE3 is a 100V N-channel Power MOSFET in a PowerPAK® SO-8 package. This device offers a continuous drain current of 27.8A at 25°C (Tc) and a low on-resistance of 23mOhm at 10A, 10V. Key parameters include a Vgs(th) of 2.8V (max) at 250µA, a gate charge of 29.5 nC at 10V, and input capacitance (Ciss) of 900 pF at 50V. It supports a wide operating temperature range from -55°C to 150°C (TJ) and can dissipate up to 35.7W (Tc). This MOSFET is suitable for applications in power management, industrial, and automotive sectors. The component is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 35.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 29.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 50 V |
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