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SI7456CDP-T1-GE3

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SI7456CDP-T1-GE3

MOSFET N-CH 100V 27.5A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix N-Channel TrenchFET® MOSFET, part number SI7456CDP-T1-GE3, offers a 100V drain-source breakdown voltage. This device features a continuous drain current of 27.5A at 25°C (Tc) and a maximum on-resistance of 23.5mOhm at 10A and 10V. The PowerPAK® SO-8 package facilitates efficient thermal management, with a maximum power dissipation of 5W (Ta) and 35.7W (Tc). Key electrical characteristics include a gate charge of 23 nC (max) at 10V and input capacitance of 730 pF (max) at 50V. The device operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel packaging. This MOSFET is suitable for applications in power management, automotive systems, and industrial control.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27.5A (Tc)
Rds On (Max) @ Id, Vgs23.5mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)5W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id2.8V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds730 pF @ 50 V

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