SI7455DP-T1-GE3
MOSFET P-CH 80V 28A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7455DP-T1-GE3 is a P-Channel Power MOSFET designed for high-efficiency power management applications. This device features an 80V drain-source breakdown voltage and a continuous drain current capability of 28A at 25°C (Tc). With a maximum on-resistance of 25mOhm at 10.5A and 10V gate-source voltage, it offers low conduction losses. The MOSFET is housed in a PowerPAK® SO-8 package, enabling efficient thermal dissipation with a maximum power dissipation of 83.3W at 25°C (Tc). Key parameters include a gate charge of 155 nC (max) at 10V and an input capacitance of 5160 pF (max) at 40V. Operating across a temperature range of -55°C to 150°C (TJ), this component is suitable for use in automotive, industrial, and server power supplies.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5160 pF @ 40 V |
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