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SI7454DP-T1-GE3

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SI7454DP-T1-GE3

MOSFET N-CH 100V 5A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix N-Channel TrenchFET® MOSFET, part number SI7454DP-T1-GE3, offers a 100V drain-source breakdown voltage and a continuous drain current of 5A at 25°C. This device features a low on-resistance of 34mOhm maximum at 7.8A and 10V gate-source voltage. The PowerPAK® SO-8 package provides efficient thermal dissipation with a maximum power dissipation of 1.9W. Key parameters include a gate charge of 30 nC at 10V and a gate-source voltage range of ±20V, with a threshold voltage of 4V at 250µA. It is suitable for applications requiring robust power switching in automotive and industrial sectors. The component is supplied in Tape & Reel packaging.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs34mOhm @ 7.8A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V

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