SI7454DP-T1-GE3
MOSFET N-CH 100V 5A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel TrenchFET® MOSFET, part number SI7454DP-T1-GE3, offers a 100V drain-source breakdown voltage and a continuous drain current of 5A at 25°C. This device features a low on-resistance of 34mOhm maximum at 7.8A and 10V gate-source voltage. The PowerPAK® SO-8 package provides efficient thermal dissipation with a maximum power dissipation of 1.9W. Key parameters include a gate charge of 30 nC at 10V and a gate-source voltage range of ±20V, with a threshold voltage of 4V at 250µA. It is suitable for applications requiring robust power switching in automotive and industrial sectors. The component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
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