SI7454DDP-T1-GE3
MOSFET N-CH 100V 21A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel TrenchFET® SI7454DDP-T1-GE3. This device features 100 V drain-source breakdown voltage and 21 A continuous drain current at 25°C (Tc). Rds(on) is specified at 33 mOhm maximum for a gate-source voltage of 10 V and drain current of 10 A. The device exhibits a maximum gate charge (Qg) of 19.5 nC at 10 V and a maximum input capacitance (Ciss) of 550 pF at 50 V. Power dissipation is rated at 4.1 W (Ta) and 29.7 W (Tc). The SI7454DDP-T1-GE3 is housed in a PowerPAK® SO-8 surface mount package, suitable for demanding applications across automotive and industrial sectors. Operating temperature range is from -55°C to 150°C (TJ). This component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.1W (Ta), 29.7W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 50 V |
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