SI7454CDP-T1-GE3
MOSFET N-CH 100V 22A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7454CDP-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 22A at 25°C (Tc). The low on-resistance (Rds On) of 30.5mOhm at 10A and 10V drive voltage, coupled with a maximum gate charge (Qg) of 19.5 nC at 10V, ensures minimized conduction and switching losses. Packaged in a PowerPAK® SO-8 surface mount configuration, it offers excellent thermal performance with a maximum power dissipation of 29.7W at 25°C (Tc). Typical applications include power supplies, motor control, and battery management systems. The device operates across a wide temperature range from -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 30.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.1W (Ta), 29.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 50 V |
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