SI7452DP-T1-GE3
MOSFET N-CH 60V 11.5A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SI7452DP-T1-GE3, offers a 60V drain-source breakdown voltage with a continuous drain current of 11.5A at 25°C ambient. This device features a low on-resistance of 8.3mOhm maximum at 19.3A and 10V gate drive. Optimized for high efficiency, it utilizes Vishay's PowerPAK® SO-8 package, enabling superior thermal performance and a compact footprint. Typical applications include power management in consumer electronics, industrial automation, and automotive systems. The device operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 19.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
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