SI7448DP-T1-GE3
MOSFET N-CH 20V 13.4A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7448DP-T1-GE3 is an N-Channel MOSFET designed for efficient power management. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 13.4A at 25°C ambient temperature. Its low on-resistance of 6.5mOhm at 22A and 4.5V gate-source voltage, enabled by its TrenchFET technology, minimizes conduction losses. The device is housed in a PowerPAK® SO-8 surface-mount package, facilitating compact board designs with improved thermal performance, dissipating up to 1.9W. It operates across a wide temperature range of -55°C to 150°C. Drive voltages for optimal performance range from 2.5V to 4.5V, with a maximum gate-source voltage of ±12V. The gate charge at 4.5V Vgs is 50 nC. This MOSFET is suitable for applications in industrial and automotive sectors requiring robust power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 22A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
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