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SI7448DP-T1-E3

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SI7448DP-T1-E3

MOSFET N-CH 20V 13.4A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI7448DP-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 13.4A at 25°C (Ta), with a maximum power dissipation of 1.9W (Ta). The low on-resistance of 6.5mOhm at 22A and 4.5V Vgs, coupled with a low gate charge of 50 nC at 4.5V Vgs, makes it suitable for demanding power management tasks. It operates with a gate drive voltage range of 2.5V to 4.5V and has a maximum gate-source voltage of ±12V. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA. Packaged in a PowerPAK® SO-8 for surface mounting and supplied on tape and reel, this MOSFET is utilized in industries such as consumer electronics, industrial automation, and automotive systems. It operates within a temperature range of -55°C to 150°C (TJ).

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13.4A (Ta)
Rds On (Max) @ Id, Vgs6.5mOhm @ 22A, 4.5V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 4.5 V

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