SI7447ADP-T1-GE3
MOSFET P-CH 30V 35A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7447ADP-T1-GE3 is a P-channel Power MOSFET featuring a 30V drain-source breakdown voltage. This device offers a low on-resistance of 6.5mOhm at 24A and 10V gate drive, with a continuous drain current capability of 35A at 25°C (Tc). It is housed in a PowerPAK® 1212-8 surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 83.3W at 25°C (Tc). Key characteristics include a gate charge of 150nC (max) at 10V and input capacitance of 4650pF (max) at 15V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power management, automotive, and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4650 pF @ 15 V |
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