SI7446BDP-T1-GE3
MOSFET N-CH 30V 12A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7446BDP-T1-GE3 is an N-Channel power MOSFET designed for demanding applications. This device features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 12A at 25°C with a maximum power dissipation of 1.9W. The low on-resistance of 7.5mOhm at 19A and 10V gate-source voltage, achieved through Vishay's TrenchFET technology, minimizes conduction losses.
The SI7446BDP-T1-GE3 is housed in the compact PowerPAK® SO-8 package, suitable for surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 33 nC at 5V and input capacitance (Ciss) of 3076 pF at 15V. It operates across a wide temperature range of -55°C to 150°C. This component is utilized in power management solutions across various industries including automotive and industrial power systems. The device is supplied on tape and reel for automated assembly.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3076 pF @ 15 V |
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