SI7446BDP-T1-E3
MOSFET N-CH 30V 12A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7446BDP-T1-E3 is an N-Channel Power MOSFET featuring a 30V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C. This device exhibits a low on-resistance of 7.5mOhm at 19A and 10Vgs, facilitated by its advanced trench technology. Optimized for efficient power management, it is housed in a PowerPAK® SO-8 surface-mount package, offering excellent thermal performance with a maximum power dissipation of 1.9W. Key parameters include a gate charge (Qg) of 33 nC at 5Vgs and input capacitance (Ciss) of 3076 pF at 15Vds. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply, motor control, and battery management applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3076 pF @ 15 V |
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