SI7445DP-T1-E3
MOSFET P-CH 20V 12A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7445DP-T1-E3 is a P-Channel power MOSFET designed for high-efficiency power management applications. This device features a 20V drain-to-source breakdown voltage and supports a continuous drain current of 12A at 25°C with a maximum power dissipation of 1.9W. The low on-resistance of 7.7mOhm is achieved at 19A and 4.5V gate drive, with a threshold voltage of 1V at 250µA. Gate charge is rated at 140 nC maximum at 5V.
The SI7445DP-T1-E3 utilizes a PPAK® 1212-8 surface-mount package, offering excellent thermal performance and a small footprint suitable for demanding power conversion and motor control designs in automotive and industrial sectors. It operates across a wide temperature range of -55°C to 150°C. The device is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 19A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
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