SI7440DP-T1-E3
MOSFET N-CH 30V 12A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7440DP-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C, with a maximum on-resistance (Rds On) of 6.5mOhm at 21A and 10V Vgs. The gate charge (Qg) is 35nC at 4.5V Vgs, enabling fast switching performance.
The MOSFET is housed in a surface-mount PowerPAK® SO-8 package, offering excellent thermal dissipation with a power dissipation rating of 1.9W at 25°C. The operating temperature range is -55°C to 150°C. This component is well-suited for use in automotive, industrial, and consumer electronics power management systems where high current density and low on-resistance are critical. The device supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. This component is supplied on a tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
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