SI7434DP-T1-E3
MOSFET N-CH 250V 2.3A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7434DP-T1-E3 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 250V Drain-Source Voltage (Vdss) and a continuous drain current of 2.3A at 25°C, with a maximum power dissipation of 1.9W. The device exhibits a low on-resistance of 155mOhm at 3.8A and 10V, facilitated by its advanced trench technology. It operates with a gate drive voltage range of 6V to 10V and has a maximum gate-source voltage of ±20V. The threshold voltage (Vgs(th)) is 4V at 250µA. Packaged in a PowerPAK® SO-8 for efficient thermal management and optimal board space utilization, this MOSFET is suitable for use in industrial, automotive, and consumer electronics power management systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
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