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SI7434ADP-T1-RE3

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SI7434ADP-T1-RE3

MOSFET N-CH 250V 3.7A/12.3A PPAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix ThunderFET® SI7434ADP-T1-RE3 is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 250V Drain-Source Voltage (Vdss) and supports a continuous drain current of 3.7A at 25°C ambient temperature, escalating to 12.3A when measured at the case. With a maximum Power Dissipation of 5W (Ta) and 54.3W (Tc), it is suitable for demanding thermal environments. The low on-resistance is specified as 150mOhm maximum at 3.7A and 10V Vgs, and the gate charge (Qg) is 16.5 nC maximum at 10V. Input capacitance (Ciss) is a maximum of 600 pF at 125V. The MOSFET is housed in a PowerPAK® SO-8 surface mount package and operates across a temperature range of -55°C to 150°C. This component finds application in power supply units, motor control, and industrial automation.

Additional Information

Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.7A (Ta), 12.3A (Tc)
Rds On (Max) @ Id, Vgs150mOhm @ 3.7A, 10V
FET Feature-
Power Dissipation (Max)5W (Ta), 54.3W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 125 V

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