SI7425DN-T1-GE3
MOSFET P-CH 12V 8.3A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI7425DN-T1-GE3. This device features a 12V drain-source voltage and 8.3A continuous drain current at 25°C ambient. The low on-resistance of 16mOhm is achieved at 12.6A and 4.5V gate-source voltage. It operates within a temperature range of -55°C to 150°C and offers a maximum power dissipation of 1.5W. The device is packaged in a PowerPAK® 1212-8 for surface mounting and is supplied on tape and reel. Key parameters include a gate charge of 39nC at 4.5V and a threshold voltage of 1V at 300µA. This MOSFET is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 12.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 300µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 4.5 V |
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