SI7421DN-T1-GE3
MOSFET P-CH 30V 6.4A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI7421DN-T1-GE3, offers a 30V drain-source breakdown voltage and a continuous drain current of 6.4A at 25°C ambient. This surface mount device in the PowerPAK® 1212-8 package features a low on-resistance of 25mOhm maximum at 9.8A and 10V gate-source voltage. With a maximum power dissipation of 1.5W (Ta), it is suitable for applications requiring efficient power switching. The device operates across a wide temperature range of -55°C to 150°C (TJ) and supports gate drive voltages from 4.5V to 10V. This component is commonly utilized in power management, automotive, and industrial applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 9.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
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