SI7414DN-T1-GE3
MOSFET N-CH 60V 5.6A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7414DN-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 5.6A at 25°C, with a maximum power dissipation of 1.5W. The low on-resistance of 25mOhm at 8.7A and 10V gate drive ensures efficient power transfer. Operating across a wide temperature range of -55°C to 150°C, the SI7414DN-T1-GE3 is housed in a surface-mount PowerPAK® 1212-8 package, supplied on tape and reel. Its gate charge is rated at a maximum of 25 nC at 10V, with a Vgs(th) of 3V at 250µA and a maximum gate-source voltage of ±20V. This component is utilized in power management, automotive, and industrial equipment.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 8.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
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