SI7414DN-T1-E3
MOSFET N-CH 60V 5.6A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7414DN-T1-E3 is an N-Channel power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 5.6A at 25°C ambient. With a maximum on-resistance of 25mOhm at 8.7A and 10V Vgs, it offers efficient power handling. The device utilizes a PowerPAK® 1212-8 surface-mount package, enabling high power density and thermal performance. Operating across a junction temperature range of -55°C to 150°C, the SI7414DN-T1-E3 is suitable for power management solutions in automotive, industrial, and consumer electronics sectors. Key parameters include a gate charge of 25 nC at 10V, a maximum gate-source voltage of ±20V, and a threshold voltage of 3V at 250µA. The component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 8.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
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