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SI7413DN-T1-GE3

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SI7413DN-T1-GE3

MOSFET P-CH 20V 8.4A PPAK 1212-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI7413DN-T1-GE3 is a P-Channel MOSFET designed for power management applications. This device features a 20V Drain-to-Source breakdown voltage and a continuous drain current capability of 8.4A at 25°C (Ta). With a maximum specified Rds(on) of 15mOhm at 13.2A and 4.5V Vgs, it offers low conduction losses. The MOSFET utilizes a PowerPAK® 1212-8 surface-mount package, providing efficient thermal performance with a maximum power dissipation of 1.5W (Ta). Gate drive voltages range from 1.8V to 4.5V, with a maximum gate-source voltage of ±8V. Key parameters include a gate charge of 51nC at 4.5V Vgs and a threshold voltage of 1V at 400µA. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in automotive and industrial power systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® 1212-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8.4A (Ta)
Rds On (Max) @ Id, Vgs15mOhm @ 13.2A, 4.5V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id1V @ 400µA
Supplier Device PackagePowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 4.5 V

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