SI7413DN-T1-E3
MOSFET P-CH 20V 8.4A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI7413DN-T1-E3, offers a 20V drain-to-source voltage rating and 8.4A continuous drain current capability at 25°C ambient. This surface mount device features a low on-resistance of 15mOhm maximum at 13.2A and 4.5V gate-source voltage. The PPAK® 1212-8 package provides excellent thermal performance with a maximum power dissipation of 1.5W (Ta). Key characteristics include a gate charge of 51nC at 4.5V and a threshold voltage of 1V at 400µA. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in power management and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 13.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 400µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 4.5 V |
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