SI7411DN-T1-GE3
MOSFET P-CH 20V 7.5A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI7411DN-T1-GE3, offers a 20V drain-source voltage and 7.5A continuous drain current at 25°C. This device features a low on-resistance of 19mOhm at 11.4A and 4.5V Vgs. With a maximum power dissipation of 1.5W (Ta), it is housed in the compact PowerPAK® 1212-8 surface-mount package. The gate charge is specified at 41nC @ 4.5V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in power management, battery charging, and load switching within the consumer electronics and industrial automation sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 11.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 300µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 4.5 V |
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