SI7409ADN-T1-GE3
MOSFET P-CH 30V 7A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7409ADN-T1-GE3 is a P-Channel MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 7A at 25°C ambient. The low on-resistance of 19mOhm at 11A and 4.5V gate drive makes it suitable for applications requiring minimal power dissipation. It operates with a gate-source voltage range of ±12V and a threshold voltage of 1.5V at 250µA. The MOSFET utilizes advanced TrenchFET technology for improved performance and is housed in a PowerPAK® 1212-8 surface-mount package, enabling effective thermal management with a maximum power dissipation of 1.5W. This component is commonly found in automotive, industrial, and consumer electronics for power switching and load management. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 11A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
