SI7407DN-T1-GE3
MOSFET P-CH 12V 9.9A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI7407DN-T1-GE3, offers a 12V drain-source voltage and 9.9A continuous drain current at 25°C. This device features a low Rds(on) of 12mOhm at 15.6A and 4.5V Vgs, enabled by its advanced trench technology. The gate charge is specified at 59 nC maximum at 4.5V Vgs, with a Vgs(th) of 1V at 400µA. Operating across a temperature range of -55°C to 150°C, this P-Channel MOSFET is housed in a PowerPAK® 1212-8 surface-mount package. It is suitable for applications in consumer electronics and power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 15.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 400µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 4.5 V |