SI7407DN-T1-E3
MOSFET P-CH 12V 9.9A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7407DN-T1-E3 is a P-Channel MOSFET designed for efficient power management. It features a Drain-to-Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 9.9A at 25°C. The device offers a low on-resistance (Rds On) of 12mOhm at 15.6A and 4.5V, with a gate charge (Qg) of 59 nC at 4.5V. Operating within a temperature range of -55°C to 150°C, this MOSFET is housed in a compact PowerPAK® 1212-8 surface-mount package, ideal for space-constrained applications. The Vishay Siliconix SI7407DN-T1-E3 finds application in various industries including consumer electronics and industrial automation. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 15.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 400µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 4.5 V |