SI7405BDN-T1-GE3
MOSFET P-CH 12V 16A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel Power MOSFET, part number SI7405BDN-T1-GE3. This device features a 12V drain-source voltage and a continuous drain current of 16A at 25°C (Tc). The PowerPAK® 1212-8 package houses a P-channel MOSFET with a maximum Rds(on) of 13mOhm at 13.5A and 4.5V Vgs. Key parameters include a gate charge (Qg) of 115nC at 8V and input capacitance (Ciss) of 3500pF at 6V. It supports drive voltages from 1.8V to 4.5V and operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 3.6W (Ta) and 33W (Tc). This component is commonly utilized in power management, battery charging, and automotive applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 13.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 6 V |