SI7404DN-T1-GE3
MOSFET N-CH 30V 8.5A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® Series SI7404DN-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30 V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 8.5 A at 25°C, with a maximum power dissipation of 1.5 W. The low on-resistance (Rds On) of 13 mOhm at 13.3 A and 10 V gate-source voltage minimizes conduction losses. It operates with gate drive voltages ranging from 2.5 V to 10 V, and has a maximum gate-source voltage rating of ±12V. The threshold voltage (Vgs(th)) is 1.5 V at 250 µA, and the gate charge (Qg) is 30 nC at 4.5 V. This component is housed in a PowerPAK® 1212-8 surface-mount package, facilitating efficient thermal management. Suitable for use in power management, automotive, and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 13.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
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