SI7404DN-T1-E3
MOSFET N-CH 30V 8.5A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI7404DN-T1-E3 is an N-Channel Power MOSFET designed with TrenchFET® technology. This component features a 30V drain-to-source voltage (Vdss) and supports continuous drain current of 8.5A at 25°C with a maximum power dissipation of 1.5W. The device offers a low on-resistance of 13mOhm at 13.3A and 10V Vgs. It operates with a gate drive voltage range from 2.5V to 10V and has a maximum gate charge of 30 nC at 4.5V. This surface-mount device is housed in a PowerPAK® 1212-8 package and operates across a temperature range of -55°C to 150°C. Its specifications make it suitable for applications in power management, automotive systems, and industrial motor control. The SI7404DN-T1-E3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 13.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
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