SI7403BDN-T1-GE3
MOSFET P-CH 20V 8A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, part number SI7403BDN-T1-GE3, from the TrenchFET® series. This device features a 20V drain-source breakdown voltage and a continuous drain current of 8A at 25°C (Tc). It offers a low on-resistance of 74mOhm maximum at 5.1A and 4.5V Vgs. The MOSFET is housed in a PowerPAK® 1212-8 surface mount package, providing excellent thermal performance with power dissipation ratings of 3.1W (Ta) and 9.6W (Tc). Key electrical characteristics include a gate charge of 15nC maximum at 8V Vgs and an input capacitance of 430pF maximum at 10V Vds. It operates across a temperature range of -55°C to 150°C. This component is suitable for applications in automotive, industrial power, and consumer electronics. Packaging is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 5.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 9.6W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V |
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