SI7403BDN-T1-E3
MOSFET P-CH 20V 8A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET, part number SI7403BDN-T1-E3, is a P-channel device with a drain-source voltage (Vdss) of 20V. It offers a continuous drain current (Id) of 8A at 25°C (Tc) and a maximum on-resistance (Rds On) of 74mOhm at 5.1A and 4.5V. This power MOSFET features a PowerPAK® 1212-8 surface-mount package, enabling efficient thermal management with a power dissipation of 9.6W at 25°C (Tc). Key parameters include a gate charge (Qg) of 15 nC at 8V and input capacitance (Ciss) of 430 pF at 10V. The device is suitable for applications requiring robust power switching and is commonly found in consumer electronics, industrial automation, and automotive systems. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 5.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 9.6W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V |
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