SI7402DN-T1-E3
MOSFET N-CH 12V 13A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SI7402DN-T1-E3, offers a 12V drain-source voltage rating and a continuous drain current of 13A at 25°C ambient. This device features a low on-resistance of 5.7mOhm maximum at 20A and 4.5V Vgs. Designed with a PowerPAK® 1212-8 surface mount package, it supports a maximum power dissipation of 1.5W ambient. The gate charge is specified at 55nC maximum at 4.5V Vgs, with a gate-source voltage range of ±8V and a threshold voltage of 850mV at 250µA. Operating temperature range is -55°C to 150°C. This component is suitable for applications in computing and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 20A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 4.5 V |
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