SI7392DP-T1-E3
MOSFET N-CH 30V 9A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI7392DP-T1-E3 is an N-Channel Power MOSFET with a 30V drain-source voltage. This component features a low on-resistance of 9.75mOhm at 15A and 10V Vgs. Designed for efficient power conversion, it offers a continuous drain current of 9A at 25°C with a maximum power dissipation of 1.8W. The gate charge is specified at 15 nC maximum at 4.5V Vgs, and the device operates effectively with gate drive voltages from 4.5V to 10V. Mounting is via surface mount in a PowerPAK® SO-8 package. Typical applications include power management in consumer electronics, industrial automation, and automotive systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.75mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
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