SI7390DP-T1-GE3
MOSFET N-CH 30V 9A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7390DP-T1-GE3 is an N-Channel Power MOSFET with a 30V drain-to-source voltage (Vdss). It offers a continuous drain current (Id) of 9A at 25°C and a maximum power dissipation of 1.8W (Ta). This device features a low on-resistance (Rds On) of 9.5mOhm at 15A and 10V. The Gate Charge (Qg) is specified at a maximum of 15 nC at 4.5V. Operating across a wide temperature range from -55°C to 150°C (TJ), this MOSFET is housed in a PowerPAK® SO-8 surface-mount package. Drive voltages are supported from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. The SI7390DP-T1-GE3 is utilized in applications such as automotive, industrial power management, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
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