SI7390DP-T1-E3
MOSFET N-CH 30V 9A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI7390DP-T1-E3 is an N-channel power MOSFET designed for high-efficiency switching applications. This component offers a 30V drain-source breakdown voltage and a continuous drain current capability of 9A at 25°C ambient temperature, with a maximum power dissipation of 1.8W in the same condition. Featuring low on-resistance of 9.5mOhm at 15A and 10Vgs, this MOSFET is optimized for fast switching and reduced conduction losses across various drive voltages from 4.5V to 10V. The gate charge (Qg) is specified at a maximum of 15nC at 4.5Vgs. Housed in a PowerPAK® SO-8 surface-mount package, the SI7390DP-T1-E3 is suitable for demanding applications in power management, automotive systems, and industrial control. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
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